1 . 9 2. 80? 0. 05 1. 60? 0. 05 0 . 3 5 2 . 9 2 ? 0 . 0 5 0 . 9 5 ? 0 . 0 2 5 1 . 0 2 2SA812 transistor (pnp) features power dissipation p cm : 0.2 w (tamb=25 ) collector current i cm : -0.1 a collector-base voltage v (br)cbo : -60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=-100 a, i e =0 -60 v collector-emitter breakdown voltage v (br)ceo ic= -1ma, i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e = -100 a, i c =0 -5 v collector cut-off current i cbo v cb =- 60 v , i e =0 -0.1 a emitter cut-off current i ebo v eb = -5v , i c =0 -0.1 a dc current gain h fe v ce =- 6v, i c = -1ma 90 600 collector-emitter saturation voltage v ce (sat) i c =-100 ma, i b = -10ma -0.3 v base-emitter voltage v be i c =-1ma, v ce =-6v -0.68 v transition frequency f t v ce =-6v, i c = -10ma 180 mhz classification of h fe marking m4 m5 m6 m7 range 90-180 135-270 200-400 300-600 sot-23-3l 1. base 2. emitter 3. collector 2SA812 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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